EE-SY1200【PDF 1/4 页】SENSOR PHOTO ULTRA COMP SMD

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Sheet目录410

[1页]2页 3页 4页

CSM_EE-SY1200_E_1_1

EE-SY1200

Photomicrosensor (Reflective)

■ Dimensions

(Unit: mm)

■ Features

? Ultra-compact model.

Detector center

Emitter center

Note.

Unless otherwise specified tolerances

are ±0.15.

? PCB surface mounting type.

? High S/N ratio

( 0.7 )

(1)

3.2

(0.8)

1.9

No burrs dimensions are included in out-

line dimensions.

The burrs dimensions are 0.15 MAX.

Diagonal line indicate the region is part

Au plating area.

(High light current / Low leakage current)

■ Absolute Maximum Ratings

(Ta=25 ° C)

Item

Symbol

Rated value

Unit

Recommended Soldering Pattern

Forward current

I F

50 *1

1.1

2-1

2-1.7

2-1

Emitter

Pulse forward

current

I FP

500 *2

Reverse voltage

V R

1.2

2-0.65

2-0.45

Collector-Emitter

voltage

V CEO

0.7

2-0.65

Note 1. The shaded portion in the

above figure may cause short-

ing. Do not wire in this portion.

Detector

Emitter-Collector

voltage

Collector current

V ECO

I C

2. The dimensional tolerance for

the recommended soldering

pattern is ± 0.1 mm.

Collector dissipa-

tion

Operating temperature

P C

Topr

50 *1

? 25 to +85

° C

Terminal No.

Name

Anode

Internal Circuit

Storage temperature

Reflow soldering temperature

Tstg

Tsol

? 40 to +100

240 *3

° C

Cathode

Collector

Emitter

*1. Refer to the temperature rating chart if the ambient tem-

perature exceeds 25 ° C.

*2. The pulse width is 10 μ s maximum with a frequency of

100 Hz.

*3. Complete soldering within 10 seconds for reflow soldering.

■ Electrical and Optical Characteristics (Ta=25 ° C )

Value

Item

Symbol

MIN.

TYP.

MAX.

Unit

Condition

Forward voltage

V F

---

1.2

1.4

I F = 20 mA

Emitter

Reverse current

I R

---

μ A

V R = 4 V

Peak emission wave-

length

Light current 1

Light current 2

Dark current

Detector Leakage current 1

Leakage current 2

Collector-Emitter satu-

rated voltage

Peak spectral sensitivi-

ty wavelength

Rising time

Falling time

λ P

I L 1

I L 2

I D

I LEAK 1

I LEAK 2

V CE ( sat )

λ P

---

200

150

---

940

---

850

---

1000

---

200

500

200

---

μ A

μ s

---

I F = 10 mA, V CE = 2 V, Aluminum-

deposited surface, d = 4 mm* 1

I F = 4 mA, V CE = 2 V, Aluminum-de-

posited surface, d = 1 mm* 1

V CE = 10 V, 0 l x

I F = 10 mA, V CE = 2 V,

with no reflection* 2

I F = 4 mA, V CE = 2 V,

with no reflection* 2

---

V CC = 2 V, R L = 1 k Ω ,

I L = 100 μ A, d = 1 mm* 1

V CC = 2 V, R L = 1 k Ω ,

I L = 100 μ A, d = 1 mm* 1

*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which

is reflected from surroundings of the Photomicrosensor and /or the background object.

Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.

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